Preliminary datasheet
30V P-Channel MOSFETs
PDEB3907Z
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
DFN3x3 Pin Configuration
DDD D
S SSG
G
D
BVDSS -30V
RDSON 20m
ID -30A
Features -30V,-30A, RDS(ON) =20mΩ@VGS = -10V
Fast switching Green Device Available
Suit for -4.
5V Gate Drive Applications
Applications
MB / VGA / Vcore POL ...