20V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DD D D SS SG
G
D S
PDEC2310Z
BVDSS 20V
RDSON 10m
ID 30A
Features 20V,30A, RDS(ON) =10mΩ @VGS = 10V Improved dv/dt capability ESD Protection Diode Embedded Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2n...