30V N-Channel MOSFETs
PDC3908Z
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Pin Configuration
DDDD
S S SG
G
D S
BVDSS 30V
RDSON 8.
5m
ID 48A
Features
30V,48A, RDS(ON) =8.
5mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore POL Applications ...