65V N-Channel MOSFETs
PDC6988Z-5
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3X3 Pin Configuration DDDD
SSSG
G
D S
BVDSS 65V
RDSON 16m
ID 35A
Features
65V,35A, RDS(ON) =16mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Motor Drive Power Tools LED Lighting...