20V N-Channel MOSFETs
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Dual NEP Pin Configuration
D1 D1D2 D2
D1 D2 G1 G2
G2 S1G1S2
S1 S2
PDEC2210K
V
BVDSS RDSON
ID
20V
14m
8.
6A
Features
20V,8.
6A, RDS(ON) =14mΩ @VGS = 4.
5V Improved dv/dt capability ESD Protection Diode Embedded 100% EAS Guaranteed Green Device Available
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