30V N-Channel MOSFETs
PDC3808V
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3x3 Dual Pin Configuration D1
D1 D1D2 D2
S1G1S2 G2
G1
G2 S1
D2 S2
BVDSS 30V
RDSON 10.
5mΩ
ID 42A
Features 30V,42A, RDS(ON) =10.
5mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA /...