100V Dual N-Channel MOSFETs
PDC0810V
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK3X3 Dual Pin Configuration
D1D1D2D2
D1 G1 G2
D2
BVDSS 100V
RDSON 200m
ID 7.
8A
Features
100V,7.
8A, RDS(ON) =200mΩ @VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load sw...