40V N-Channel MOSFETs
PDC4960X
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Pin Configuration
DDDD
S S SG
G
D S
BVDSS 40V
RDSON 2.
8m
ID 100A
Features
40V, 100A, RDS(ON) =2.
8mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR
Absol...