30V P-Channel MOSFETs
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK5X6 Pin Configuration
DDDD S S SG
D S
PDC3901X
BVDSS -30V
RDSON 3.
3m
ID -100A
Features
-30V,-100A, RDS(ON) =3.
3mΩ@VGS = -10V
Fast switching
Green Device Available
Suit for -4.
5V Gate Drive Applications
Applications
Motor Driver Applications POL Applications...