100V Dual N-Channel MOSFETs
PDC0810T
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Dual Pin Configuration
D2 D2 D1 D1
D1
G2 S2 G1 S1
G1
G2 S1
D2 S2
BVDSS 100V
RDSON 185m
ID 10A
Features
100V,10A, RDS(ON) =185mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
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