40V N-Channel MOSFETs
PDC4801R
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
Q1 Q2
PPAK5x6 Asymmetric Dual Pin Configuration
S2 S2 S2 G2
S1/D2
D1
D1 D1 G1
S2 S2 S2 G2
S1/D2
G1
D1 D1 D1 G1
D1 G2
S1
BVDSS 40V 40V
RDSON 13m 6.
8m
ID 39A 60A
Features
Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Avail...