40V N-Channel MOSFETs
PDS4956
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
DDD D
SGS1S G
G
D S
BVDSS 40V
RDSON 12m
ID 13A
Features 40V,13A,RDS(ON) =12mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Motor Drive Power Tools LED Lighting
A...