40V N-Channel MOSFETs
PDS4910
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D DD D
G S SS
G
D S
BVDSS 40V
RDSON 19m
ID 6.
7A
Features
40V, 6.
7A, RDS(ON)=19mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
Applications
Notebook Load Switch LED applications Hand-Held Device
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