60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
DDDD
SS SG
G
D S
PDS6966A
BVDSS 60V
RDSON 8.
8m
ID 14A
Features 60V,14A, RDS(ON) =8.
8mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
Applications
Networking Load Switch LED applications Quick Charger Appl...