40V N+P Dual Channel MOSFETs
PDC4756T
General Description
These N+P dual Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
PPAK5x6 Dual Pin Configuration
D2 D2 D1D1
D1
D2 2
G2 S2 G1 S1
G1
G2 S1 S2
BVDSS 40V -40V
RDSON 11.
5m 30m
ID 42A -27A
Features
Fast switching Green Device Available Suit for 4.
5V Gate Drive Applications 100% EAS Guaranteed
Applications
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