Features • Single Voltage Read/Write Operation: 2.
65V to 3.
3V (BV), 3.
0V to 3.
6V (LV) • Access Time – 70 ns • Sector Erase Architecture • • • • • • • • • • • • – Thirty-one 32K Word (64K Bytes) Sectors with Individual Write Lockout – Eight 4K Word (8K Bytes) Sectors with Individual Write Lockout Fast Word Program Time – 20 µs Fast Sector Erase Time – 300 ms Dual-plane Organization, Permitting Concurrent Read while Program/Erase Memory Plane A: Eight 4K Word and Seven 32K Word Sectors Memory Plane B: Twenty-four 32K Word Sectors Erase Suspend Capability – Supports Reading/Programming Data from Any Sector by Suspending Erase of Any Different Sector Low-power Operation – 30 mA Active – 10 µA St...

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