FMMT494Q
120V
NPN SILICON PLANAR MEDIUM POWER
TRANSISTOR IN SOT23
Feature
This Bipolar Junction
Transistor (BJT) is designed to meet the stringent requirements of Automotive Applications.
Feature
BVCEO 120V IC = 1A Continuous Collector Current ICM = 2A Peak Pulse Current 500mW Power Dissipation hFE characterised up to 1A for high current gain hold up Totally Lead-Free & Fully RoHS compliant (Notes 1 & 2) Halogen and Antimony Free.
“Green” Device (Note 3) Qualified to AEC-Q101 Standards for High Reliability PPAP capable (Note 4)
Mechanical Data
Case: SOT23 (Type DN) Case Material: Molded Plastic, “Green” Molding Compound.
UL Flammability Classification Rating 94V-0 ...