65V N-Channel MOSFETs
PDS6976-5
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
DD DD
SS S G
G
D S
BVDSS 65V
RDSON 4.
5m
ID 33A
Features
65V,33A, RDS(ON) =4.
5mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applicat...