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PDS0976


Part Number PDS0976
Manufacturer Potens semiconductor
Title N-Channel MOSFETs
Description These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tai...
Features
 100V,12A, RDS(ON) =9.2mΩ@VGS = 10V
 Improved dv/dt capability
 Fast switching
 100% EAS Guaranteed
 Green Device Available Applications
 Networking
 Load Switch
 LED applications
 Quick Charger Absolute Maximum Ratings Tc=25℃ unless otherwise noted Symbol VDS VGS ID IDM EAS IAS PD TSTG T...

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Datasheet PDS0976 PDF File








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PDS0978 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G S S SG D S BVDSS 100V RDSON 8.5m ID 19A Features  100V,19A, RDS(ON) =8.5mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  Networking  Load Switch  LED applications  Quick Charger Absolute Maximum Ratings Tc=25.




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