PDS3905

PDS3903 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S PDS3903 BVDSS -30V RDSON 9.5m ID -13A Features  -30V,-13A, RDS(ON) =9.5mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  MB / VGA / Vcore  POL Applications  Load Switch  LED Application Absolute Maximum Rat.

PDS3904 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D G SS S G D S BVDSS 30V RDSON 4.2mΩ ID 30A Features  30V, 30A, RDS(ON) =4.2mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  100% EAS Guaranteed  Green Device Available Applications  MB / VGA / Vcore  POL Applications  SMPS 2nd SR Absolute Maximum Ratings Tc=25℃ unless ot.

PDS3906 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS 30V RDSON 6m ID 20A Features  30V, 20A, RDS(ON)=6mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Notebook  Load Switch  LED applications  Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted Sy.

PDS3907 : These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS -30V RDSON 20m ID -8A Features  -30V,-8A, RDS(ON) =20mΩ@VGS = -10V  Fast switching  Green Device Available  Suit for -4.5V Gate Drive Applications Applications  MB / VGA / Vcore  POL Applications  Load Switch  LED Application Absolute Maximum Ratings Tc=25℃ u.

PDS3908 : These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficiency fast switching applications. SOP8 Pin Configuration D DD D SS SG G D S BVDSS 30V RDSON 10m ID 15A Features  30V, 15A, RDS(ON)=10mΩ@VGS = 10V  Improved dv/dt capability  Fast switching  Green Device Available Applications  Notebook  Load Switch  LED applications  Hand-Held Device Absolute Maximum Ratings Tc=25℃ unless otherwise noted .