30V P-Channel MOSFETs
PDS3911
General Description These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Pin Configuration
D DD D SS SG
G
D S
BVDSS -30V
RDSON 50m
ID -5.
5A
Features -30V,-5.
5A, RDS(ON) =50mΩ@VGS = -10V Fast switching Green Device Available Suit for -4.
5V Gate Drive Applications
Applications
Notebook Load Switch Battery Protection ...