40V N-Channel MOSFETs
PDS4856
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP8 Dual Pin Configuration
D2 D1 D2 D1
D1 G1
S1G1S2 G2
S1
G2
D2 S2
BVDSS 40V
RDSON 15m
ID 10A
Features 40V,10A,RDS(ON) =15mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Motor Drive Po...