100V N+P Dual Channel MOSFETs
PDS0744
General Description
These N+P dual Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOP-8L Pin Configuration
D2D2 D1 D1
D1
D2
G2 G1 S2 G1 S1
G2 S1
S2
BVDSS 100V -100V
RDSON 155m 290m
ID 2.
1A -1.
7A
Features
Fast switching Green Device Available Suit for 4.
5V Gate Drive Applications
Applications
DC Fan Motor Drive Appli...