50V N-Channel MOSFETs
PMEN138S
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S G
G S
BVDSS 50V
RDSON 3.
5
ID 0.
3A
Features
50V,0.
3A, RDS(ON) =3.
5Ω@VGS=10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available G-S ESD Protection Diode Embedded
Applications
Motor Driv...