100V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
G
PDN0910S
BVDSS 100V
RDSON 200m
ID 2A
Features 100V,2A, RDS(ON) =200mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed
ApplicGaretieonnDsevice Available
Networking Load Switch LED applications
S
Absolut...