100V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-3S Pin Configuration
D
D
S G
G S
PMEN0998S
BVDSS 100V
RDSON 6
ID 0.
2A
Features 100V,0.
2A, RDS(ON) =6Ω@VGS=10V Improved dv/dt capability Fast switching Green Device Available G-S ESD Protection Diode Embedded
Applications
Motor Drive Power Tools LED ...