Preliminary datasheet
20V P-Channel MOSFETs
PDEN2319S
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT23-S Pin Configuration
D
D
S G
G
S
BVDSS -20V
RDSON 600m
ID -1A
Features
-20V,-1A, RDS(ON) =600mΩ@VGS = -4.
5V Improved dv/dt capability Fast switching Green Device Available Suit for -1.
5V Gate Drive Applications
Applications...