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Part Number
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HY3606P |
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Manufacturer
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HOOYI |
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Description
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N-Channel MOSFET |
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Published
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Aug 19, 2018 |
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Detailed Description
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HY3606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/162A
RDS(ON) = 3.5 mΩ (typ.) @ VGS=10V
• 100% avalanche tes...
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Datasheet
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HY3606P
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Overview
HY3606P/B
N-Channel Enhancement Mode MOSFET
Features
• 60V/162A
RDS(ON) = 3.
5 mΩ (typ.
) @ VGS=10V
• 100% avalanche tested • Reliable and Rugged • Lead Free and Green Devices Available
(RoHS Compliant)
Pin Description
DS G TO-220FB-3L
DS G TO-263-2L
Applications
• Switching application • Power Management for Inverter Systems.
D
G N-Channel MOSFET
Ordering and Marking Information
S
PB HY3606 HY3606
YYÿ XXXJWW G YYÿ XXXJWW G
Package Code P : TO-220FB-3L
Date Code YYXXX WW
B: TO-263-2L
Assembly Material G : Lead Free Device
Note: HOOYI lead-free products contain molding compounds/die attach materials and 100% matte tin plate termination finish; which are fully compliant with RoHS.
H...
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