DatasheetsPDF.com

HY1408B

Part Number HY1408B
Manufacturer HOOYI
Description N-Channel MOSFET
Published Aug 19, 2018
Detailed Description HY1408P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Dr...
Datasheet HY1408B




Overview
HY1408P/B Absolute Maximum Ratings Symbol Parameter Rating Common Ratings (TC=25°C Unless Otherwise Noted) VDSS Drain-Source Voltage VGSS Gate-Source Voltage TJ Maximum Junction Temperature TSTG Storage Temperature Range IS Diode Continuous Forward Current Mounted on Large Heat Sink TC=25°C 80 ±25 175 -55 to 175 50 IDM Pulsed Drain Current * ID Continuous Drain Current PD Maximum Power Dissipation RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient Avalanche Ratings TC=25°C TC=25°C TC=100°C TC=25°C TC=100°C 205** 50 37 89 45 1.
69 62.
5 EAS Avalanche Energy, Single Pulsed L=0.
5mH 200*** Note * Repetitive rating ; pulse width limiited by junction ...






Similar Datasheet






Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)