Part Number
|
HY1115D |
Manufacturer
|
HOOYI |
Description
|
N-Channel Enhancement Mode MOSFET |
Published
|
Aug 19, 2018 |
Detailed Description
|
HY1115D
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source...
|
Datasheet
|
HY1115D
|
Overview
HY1115D
Absolute Maximum Ratings
Symbol
Parameter
Common Ratings (TA=25°C Unless Otherwise Noted)
VDSS Drain-Source Voltage VGSS Gate-Source Voltage
TJ Maximum Junction Temperature TSTG Storage Temperature Range
IS Diode Continuous Forward Current Mounted on Large Heat Sink
TC=25°C
IDM Pulsed Drain Current * ID Continuous Drain Current
PD Maximum Power Dissipation
TC=25°C TC=25°C TC=100°C TC=25°C Tc=100°C
RθJC Thermal Resistance-Junction to Case RθJA Thermal Resistance-Junction to Ambient EAS Drain-Source Avalanche Energy
L=0.
5mH
Note * Repetitive rating ; pulse width limiited by junction temperature ** Drain current is limited by junction temperature *** VD=100V
Rating
150 ±20 1...
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