VSO200P06MD -60V/-3.
4A Dual P-Channel Advanced Power MOSFET Features  Dual P-Channel，-5V Logic Level Control  Enhancement mode  Very low on-resistance RDS(on) @ VGS=-4.
5 V  Fast Switching  High Effective  Pb-free lead plating; RoHS compliant; Hg-Free V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
5 V ID -60 130 160 -3.
4 V mΩ mΩ A SOP8 Part ID VSO200P06MD Package Type SOP8 Marking 200P06MD Tape and reel information 3000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter V(BR)DSS IS Drain-Source breakdown voltage Diode continuous forward current ID Continuous drain current@VGS=10V IDM Pulse drain current tested ② PD Power dissipation for...

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