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VSB012P03MS

Part Number VSB012P03MS
Manufacturer Vanguard Semiconductor
Description P-Channel Advanced Power MOSFET
Published Aug 19, 2018
Detailed Description Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.5 V  100 Avalanche Tested  Fast Switching  Repetitive ...
Datasheet VSB012P03MS




Overview
Features  P-Channel  Very low on-resistance RDS(on) @ VGS=-4.
5 V  100 Avalanche Tested  Fast Switching  Repetitive Avalanche Allowed up to Tjmax  Pb-free lead plating; RoHS compliant VSB012P03MS -30V/-36A P-Channel Advanced Power MOSFET V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
5V ID -30 V 10 mΩ 14 mΩ -36 A TDFN3.
3x3.
3 Part ID Package Type VSB012P03MS TDFN3.
3x3.
3 Marking Tape and reel information 012P03M 5000pcs/reel Maximum ratings, at T j=25 °C, unless otherwise specified Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ Drain-Source Breakdown Voltage Maximum Junction Temperature TSTG Storage Temperature Ran...






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