Part Number
|
VSB012P03MS |
Manufacturer
|
Vanguard Semiconductor |
Description
|
P-Channel Advanced Power MOSFET |
Published
|
Aug 19, 2018 |
Detailed Description
|
Features
P-Channel Very low on-resistance RDS(on) @ VGS=-4.5 V 100 Avalanche Tested Fast Switching Repetitive ...
|
Datasheet
|
VSB012P03MS
|
Overview
Features
P-Channel Very low on-resistance RDS(on) @ VGS=-4.
5 V 100 Avalanche Tested Fast Switching Repetitive Avalanche Allowed up to Tjmax Pb-free lead plating; RoHS compliant
VSB012P03MS
-30V/-36A P-Channel Advanced Power MOSFET
V DS R @DS(on),TYP VGS=-10 V R @DS(on),TYP VGS=-4.
5V ID
-30 V 10 mΩ 14 mΩ -36 A
TDFN3.
3x3.
3
Part ID
Package Type
VSB012P03MS TDFN3.
3x3.
3
Marking Tape and reel information
012P03M
5000pcs/reel
Maximum ratings, at T j=25 °C, unless otherwise specified
Symbol
Parameter
Common Ratings (TC=25°C Unless Otherwise Noted)
VGS Gate-Source Voltage
V(BR)DSS
TJ
Drain-Source Breakdown Voltage Maximum Junction Temperature
TSTG Storage Temperature Ran...
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