Features ♦N-CH: 30V/8A,RDS(ON)=18mΩ ♦P-CH: -30V/-7.
8A,RDS(ON)=20mΩ ♦Low On-Resistance ♦150°C Operating Temperature ♦Fast Switching ♦Lead-Free, Green Product VS4503AS 30V/8A N+P Channel Advanced Power MOSFET Pin Description Description VS4503AS designed by the trench processing techniques to achieve extremely low on-resistance.
And fast switching speed and improved transfer effective .
These features combine to make this design an extremely efficient and reliable device for variety of DC-DC applications.
Absolute Maximum Ratings Symbol Parameter Common Ratings (TC=25°C Unless Otherwise Noted) VGS Gate-Source Voltage V(BR)DSS TJ TSTG IS Drain-Source Breakdown Voltage Maximum Junction ...

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