60V N-Channel MOSFETs
PDK6912
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
SOT89 Pin Configuration
D S
D G
G
D S
BVDSS 60V
RDSON 75m
ID 5A
Features 60V,5A, RDS(ON) =75mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications Motor Drive Power Tools LED Lighting
Absolute...