30V N-Channel MOSFETs
PDP3960
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
GDS
G
S
BVDSS 30V
RDSON 3m
ID 176A
Features
30V, 176A, RDS(ON) =3mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR
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