60V N-Channel MOSFETs
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
GDS
G
S
PDP6966A
BVDSS 60V
RDSON 8.
2m
ID 70A
Features 60V,70A, RDS(ON) =8.
2mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications
Abso...