150V N-Channel MOSFETs
PDP30N15
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO220 Pin Configuration
D
G DS
G
S
BVDSS 150V
RDSON 65m
ID 28A
Features
150V,28A, RDS(ON) 65mΩ@VGS = 10V VGS Guarantee ± 25V Improved dv/dt capability Fast switching Green Device Available
Applications
Notebook Load Switch LED applications Li...