40V N-Channel MOSFETs
PDX4970
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
BVDSS 40V
RDSON 1.
5m
ID 320A
Features
40V, 320A, RDS(ON) =1.
5mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
TO247 Pin Configuration
D
S GD
G
S
Applications
MB / VGA / Vcore POL Applications SMPS 2nd SR
Absolute Maximu...