80V N-Channel MOSFETs
PDX8970
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO247 Pin Configuration
D
S GD
G
S
BVDSS 80V
RDSON 2.
6m
ID 250A
Features
80V,250A, RDS(ON) =2.
6mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications
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