100V N-Channel MOSFETs
PDR0958A
General Description These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO251 Pin Configuration
D
G
GD S
S
BVDSS 100V
RDSON 85m
ID 15A
Features 100V,15A, RDS(ON) =85mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications
A...