60V N-Channel MOSFETs
PDD6902
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration D
D
SG G
S
BVDSS 60V
RDSON 4.
5m
ID 90A
Features
60V,90A, RDS(ON) =4.
5mΩ@VGS = 10V Improved dv/dt capability Fast switching Green Device Available
Applications
PowerTools Quick Charger LED applications Motor Drive Application...