100V P-Channel MOSFETs
PDD0903-1
General Description
These P-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO252 Pin Configuration
D
G S G
D S
BVDSS -100V
RDSON 95m
ID -18A
Features
-100V,-18A, RDS(ON) 95mΩ@VGS = -10V Improved dv/dt capability Fast switching 100% PB free and Green Device Available
Applications
Networking Load Switch LED applications
Ab...