200V N-Channel MOSFETs
PDH50N20
General Description
These N-Channel enhancement mode power field effect
transistors are using trench DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency fast switching applications.
TO263 Pin Configuration
G S
D G
D S
BVDSS 200V
RDSON 24m
ID 60A
Features
200V,60A, RDS(ON) =24mΩ@VGS = 10V Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
Applications
Networking Load Switch LED applications ...