900V N-Channel MOSFETs
PMY09N90T
General Description
These N-Channel enhancement mode power field effect
transistors are using advanced super junction technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices are well suited for high efficiency switch mode power supply
BVDSS 900V
RDSON 1.
2
Features
Improved dv/dt capability Fast switching 100% EAS Guaranteed Green Device Available
ID 9A
TO-3P Pin Configuration GDS
Applications
High efficient switched mode power supplies TV Power Adapter/charger Server Po...