ST2303SRG
P Channel Enhancement Mode MOSFET
-2.
6A
DESCRIPTION
ST2303SRG is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D GS 12
FEATURE
-30V/-2.
6A, RDS(ON) = 95m-ohm (Typ.
) @VGS = -10V
-30V/-2.
0A, RDS(ON) = 125m-ohm @VGS = -4.
5V
Super...