ST2341S23RG
P Channel Enhancement Mode MOSFET
-5.
3A
DESCRIPTION
ST2341S23RG is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23-3L
3 D GS 12
1.
Gate 2.
Source 3.
Drain
FEATURE
-20V/-3.
3A, RDS(ON) = 30m-ohm (Typ.
) @VGS = -4.
5V -20V/-2.
8A, RDS(O...