ST2318SRG
N Channel Enhancement Mode MOSFET
3.
9A
DESCRIPTION ST2318SRG is the N-Channel logic enhancement mode power field effect
transistor is produced using high cell density, DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are needed in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
3 D G 1
S 2
1.
Gate 2.
Source 3.
Drain
PART MARKING SOT-23
3
18YW
12 Y: Year Code W: Week Code
FEATURE
40V/3.
9A, RDS(ON) = 42mΩ (Typ.
) @VGS =...