ST3401SRG
P Channel Enhancement Mode MOSFET
-4.
0A
DESCRIPTION
ST3401RSG is the P-Channel logic enhancement mode power field effect
transistor which is produced using high cell density DMOS trench technology.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application such as cellular phone and notebook computer power management, other battery powered circuits, and low in-line power loss are required.
The product is in a very small outline surface mount package.
PIN CONFIGURATION SOT-23
FEATURE
3 D GS 12
1.
Gate 2.
Source 3.
Drain PART MARKING SOT-23
-30V/-4.
0A, RDS(ON) = 55mΩ (Typ.
) @VGS = -10V
-30V/-3...