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Part Number
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ST36N10D |
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Manufacturer
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STANSON |
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Description
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N-Channel Enhancement Mode MOSFET |
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Published
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Sep 3, 2018 |
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Detailed Description
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ST36N10D
N Channel Enhancement Mode MOSFET
36.0A
DESCRIPTION
STN36N10D is used trench technology to provide excellent RD...
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Datasheet
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ST36N10D
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Overview
ST36N10D
N Channel Enhancement Mode MOSFET
36.
0A
DESCRIPTION
STN36N10D is used trench technology to provide excellent RDS(on) and gate charge.
Those devices are suitable for use as load switch or in PWM applications.
PIN CONFIGURATION TO-252
FEATURE
l 100V/20.
0A, RDS(ON) = 40mΩ (Typ.
) @VGS = 10V
l 100V/20.
0A, RDS(ON) = 42mΩ @VGS = 4.
5V
l Super high density cell design for extremely low RDS(ON)
l Exceptional on-resistance and maximum DC current capability
l TO-252,TO-251 package design
PART MARKING
Y: Year Code A: Date Code Q: Process Code
STANSON TECHNOLOGY 120 Bentley Square, Mountain View, Ca 94040 USA www.
stansontech.
com
Copyright © 2009, Stanson Corp.
ST36N10D 2009.
V1
ST36N10D
N ...
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