UM3413
-20V P-Channel Enhancement Mode MOSFET
DESCRIPTION
The UM3413 is the P-Channel logic enhancement mode power field effect
transistor is produced using high cell density advanced trench technology.
.
This high density process is especially tailored to minimize on-state resistance.
These devices are particularly suited for low voltage application, and low in-line power loss are needed in a very small outline surface mount package.
FEATURE
-20V/-4.
6A, RDS(ON)=35mΩ (typ.
)@VGS=-4.
5V -20V/-4.
1A,RDS(ON)=45mΩ (typ.
)@VGS=-2.
5V -20V/-3.
6A,RDS(ON)=53mΩ (typ.
)@VGS=-1.
8V Super high design for extremely low RDS(ON) Exceptional on-resistance and Maximum DC
current capability Full Ro...